INFLUENCE OF HEAT TREATMENT ON THE CONDITION OF THIN-FILM SYSTEM Cr + Ni ON SILICON

Abstract

Using Auger electron spectroscopy, an experimental study of the Si – Cr – Ni system was carried out. A comparative analysis of the results before and after exposure to thermal shock at the interfaces showed the effect of temperature on the distribution of elements over the thickness of the deposited layers. An increase in the number of thermal shocks leads to the fact that nickel remains on the surface of the silicon substrate, and chromium diffuses into silicon.

Keywords

• analysis
• substrate
• distribution
• spectrum
• system
• monochromaticity
• energy analyzer
• thermal shock
• electron gun
• temperature
• diffusion
• adhesion