Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Abstract

Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.