Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

Abstract

Abstract Antimony chalcogenides, including Sb2S3, Sb2Se3, and Sb2(S,Se)3, have been developed as attractive non‐toxic and earth‐abundant solar absorber candidates among the thin‐film photovoltaic devices. Presently, a record certified power conversion efficiency of 10.5% has been demonstrated for antimony chalcogenide solar cells, which is significantly lower than that of Cu2(In,Ga)Se2 (23.35%) and CdTe (22.1%) thin‐film solar cells. The inferior performance in antimony chalcogenide solar cells is mainly owing to a large open‐circuit voltage (VOC) deficit resulted from the defect and interface‐assisted recombination. Herein, a comprehensive review on the recent advancements interface band alignment and defect passivation are carried out. This review will provide a solid understanding on the interfaces and defects of antimony chalcogenide solar cells, which is beneficial to the research and development of such kind of solar cells.

Keywords

• antimony chalcogenide solar cells
• defect
• interface
• open‐circuit voltage deficit
• recombination