Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes

Abstract

The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material parameters, the carrier transport process can be varied with different nanowire geometry designs, which lead to different overall device performance. This study offers important insight into the design and epitaxial growth of high-performance nanowire LEDs.

Keywords

• nanowires
• gallium compounds
• indium compounds
• III-V semiconductors
• wide band gap semiconductors
• light emitting diodes
• epitaxial growth
• GaN-InGaN
• epitaxial growth
• design
• hole transport
• axial nanowire light-emitting diodes
• carrier transport
• nanowire geometry