Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor
Bhaskar Awadhiya,
Rahul Ratnakumar,
Sampath Kumar,
Sameer Yadav,
Kaushal Nigam,
Yashwanth Nanjappa,
P.N. Kondekar
Affiliations
Bhaskar Awadhiya
Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India
Rahul Ratnakumar
Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India
Sampath Kumar
Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India
Sameer Yadav
Department of Electronics and Communication, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, 522302, India
Kaushal Nigam
Department of Electronics and Telecommunication, National Institute of Technology, Raipur, G.E. Road, Raipur, Chhattisgarh 492010, India
Yashwanth Nanjappa
Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Udupi, Karnataka, 576104, India; Corresponding author.
P.N. Kondekar
Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, 482005, India
Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction less transistor (JLT) is done using TCAD silvaco suite. Furthermore, the effects of temperature fluctuation, gate length variation, and gate material engineering on the linearity performance of both devices are also studied. A few significant figures of merit, including Voltage Intercept Point 2 (VIP2), Voltage Intercept Point 3 (VIP3), Third Order Intercept Power (IIP3), 1 dB Compression Point (P1dB), Third Order Intermodulation Distortion (IMD3), and the transconductance derivative parameters First Order Transconductance (gm1), Second Order Transconductance (gm2), and Third Order Transconductance (gm3) are used to assess the device linearity and intermodulation distortion of SMG and DMG JLT's. The findings show that higher VIP2, VIP3, IIP3, 1-dB compression point and lower gm3, IMD3 values are obtained for the SMG JLT device when compared to its counterpart DMG JLT. SMG JLT, which assures strong linearity and low distortion.
