Enhanced electron dephasing in three-dimensional topological insulators

Jian Liao; Yunbo Ou; Haiwen Liu; Ke He; Xucun Ma; Qi-Kun Xue; Yongqing Li

doi:10.1038/ncomms16071

Nature Communications (Jul 2017)

Enhanced electron dephasing in three-dimensional topological insulators

Jian Liao,
Yunbo Ou,
Haiwen Liu,
Ke He,
Xucun Ma,
Qi-Kun Xue,
Yongqing Li

Affiliations

Jian Liao: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Yunbo Ou: Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Haiwen Liu: Department of Physics, Center for Advanced Quantum Studies, Beijing Normal University
Ke He: Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xucun Ma: Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Qi-Kun Xue: Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Yongqing Li: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences

DOI: https://doi.org/10.1038/ncomms16071
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 7

Abstract

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The electron dephasing mechanism in topological insulators remains unclear. Here, Liaoet al. report a sublinear power law for the temperature dependence of the electron dephasing rate in (Bi,Sb)2Te3thin films, representing a surprising deviation from conventional behaviours in two-dimensional electron systems.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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