Graphene Monolayer Nanomesh Structures and Their Applications in Electromagnetic Energy Harvesting for Solving the Matching Conundrum of Rectennas
Mircea Dragoman,
Adrian Dinescu,
Martino Aldrigo,
Daniela Dragoman,
Elaheh Mohebbi,
Eleonora Pavoni,
Emiliano Laudadio
Affiliations
Mircea Dragoman
National Institute for Research and Development in Microtechnologies (IMT), 077190 Voluntari, Ilfov, Romania
Adrian Dinescu
National Institute for Research and Development in Microtechnologies (IMT), 077190 Voluntari, Ilfov, Romania
Martino Aldrigo
National Institute for Research and Development in Microtechnologies (IMT), 077190 Voluntari, Ilfov, Romania
Daniela Dragoman
Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
Elaheh Mohebbi
Department of Science and Engineering of Matter, Environment and Urban Planning, Marche Polytechnic University, Via Brecce Bianche, 60131 Ancona, Italy
Eleonora Pavoni
Department of Science and Engineering of Matter, Environment and Urban Planning, Marche Polytechnic University, Via Brecce Bianche, 60131 Ancona, Italy
Emiliano Laudadio
Department of Science and Engineering of Matter, Environment and Urban Planning, Marche Polytechnic University, Via Brecce Bianche, 60131 Ancona, Italy
In this paper, we investigate various graphene monolayer nanomesh structures (diodes) formed only by nanoholes, with a diameter of just 20 nm and etched from the graphene layer in different shapes (such as rhombus, bow tie, rectangle, trapezoid, and triangle), and their electrical properties targeting electromagnetic energy harvesting applications. In this respect, the main parameters characterizing any nonlinear device for energy harvesting are extracted from tens of measurements performed on a single chip containing the fabricated diodes. The best nano-perforated graphene structure is the triangle nanomesh structure, which exhibits remarkable performance in terms of its characteristic parameters, e.g., a 420 Ω differential resistance for optimal impedance matching to an antenna, a high responsivity greater than 103 V/W, and a low noise equivalent power of 847 pW/√Hz at 0 V.
