Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Abstract

Abstract With the recently increasing prevalence of deep learning, both academia and industry exhibit substantial interest in neuromorphic computing, which mimics the functional and structural features of the human brain. To realize neuromorphic computing, an energy‐efficient and reliable artificial synapse must be developed. In this study, the synaptic ferroelectric field‐effect‐transistor (FeFET) array is fabricated as a component of a neuromorphic convolutional neural network. Beyond the single transistor level, the long‐term potentiation and depression of synaptic weights are achieved at the array level, and a successful program‐inhibiting operation is demonstrated in the synaptic array, achieving a learning accuracy of 79.84% on the Canadian Institute for Advanced Research (CIFAR)‐10 dataset. Furthermore, an efficient self‐curing method is proposed to improve the endurance of the FeFET array by tenfold, utilizing the punch‐through current inherent to the device. Low‐frequency noise spectroscopy is employed to quantitatively evaluate the curing efficiency of the proposed self‐curing method. The results of this study provide a method to fabricate and operate reliable synaptic FeFET arrays, thereby paving the way for further development of ferroelectric‐based neuromorphic computing.

Keywords

• in‐memory‐computing
• low‐frequency noise (LFN)
• selective detection
• tungsten oxide