Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors

Abstract

Abstract As the COVID‐19 pandemic evolves and new variants emerge, the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of SARS‐CoV‐2. Field‐effect transistors (FETs) with two‐dimensional (2D) materials are viable platforms for the detection of virus nucleic acids (NAs) but cannot yet provide accurate information on NA variations. Herein, 2D Indium selenide (InSe) FETs were used to identify SARS‐CoV‐2 variants. The device's mobility and stability were ensured by atomic layer deposition (ALD) of Al2O3. The resulting FETs exhibited sub‐fM detection limits ranging from 10–14 M to 10–8 M. The recognition of single‐nucleotide variations was achieved within 15 min to enable the fast and direct identification of two core mutations (L452R, R203M) in Delta genomes (p < 0.01). Such capability originated from the trap states in oxidized InSe (InSe1−xOx) after ALD, resulting in traps‐involved carrier transport responsive to the negative charges of NAs. In sum, the proposed approach might highly provide epidemiological information for timely surveillance of the COVID pandemic.

Keywords

• 2D InSe
• field‐effect transistors
• SARS‐CoV‐2
• single‐nucleotide variations
• trap states