Micromachines (Apr 2023)

Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs

  • Wei Wu,
  • Yongqian Gu,
  • Mingkang Yu,
  • Chongbing Gao,
  • Yong Chen

DOI
https://doi.org/10.3390/mi14040836
Journal volume & issue
Vol. 14, no. 4
p. 836

Abstract

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Nowadays, the performance of silicon-based devices is almost approaching the physical limit of their materials, which have difficulty meeting the needs of modern high-power applications. The SiC MOSFET, as one of the important third-generation wide bandgap power semiconductor devices, has received extensive attention. However, numerous specific reliability issues exist for SiC MOSFETs, such as bias temperature instability, threshold voltage drift, and reduced short-circuit robustness. The remaining useful life (RUL) prediction of SiC MOSFETs has become the focus of device reliability research. In this paper, a RUL estimation method using the Extended Kalman Particle Filter (EPF) based on an on-state voltage degradation model for SiC MOSFETs is proposed. A new power cycling test platform is designed to monitor the on-state voltage of SiC MOSFETs used as the failure precursor. The experimental results show that the RUL prediction error decreases from 20.5% of the traditional Particle Filter algorithm (PF) algorithm to 11.5% of EPF with 40% data input. The life prediction accuracy is therefore improved by about 10%.

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