Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

Shaoyang Tan; Mengdie Sun; Dan Lu; Ruikang Zhang; Wei Wang; Chen Ji

doi:10.1109/JPHOT.2015.2483203

IEEE Photonics Journal (Jan 2015)

Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

Shaoyang Tan,
Mengdie Sun,
Dan Lu,
Ruikang Zhang,
Wei Wang,
Chen Ji

Affiliations

Shaoyang Tan: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Mengdie Sun: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Dan Lu: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Ruikang Zhang: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Wei Wang: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Chen Ji: Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

DOI: https://doi.org/10.1109/JPHOT.2015.2483203
Journal volume & issue: Vol. 7, no. 5
pp. 1 – 7

Abstract

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We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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