Journal of Electronic Science and Technology (Jun 2019)

Fabrication of Co2Fe(Al,Si) and Co2Fe(Al,Si)/MgO on Ge(111) Substrate and Its Magnetic Propertiesb

  • Kohei Kataoka,
  • Nobuki Tezuka,
  • Masashi Matsuura,
  • Satoshi Sugimoto

Journal volume & issue
Vol. 17, no. 2
pp. 109 – 115

Abstract

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We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD) ϕ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)// Ge(111) and CFAS(111)//MgO(111)Ge(111). The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.

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