A new fit to secondary emission yield in the low impact voltage regime: An improvement of Vaughan’s expression
J. Ludwick,
G. Tripathi,
M. Cahay,
S. B. Fairchild,
P. T. Murray,
T. C. Back
Affiliations
J. Ludwick
Spintronics and Vacuum Nano-Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, Ohio 45221, USA
G. Tripathi
Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210, USA
M. Cahay
Spintronics and Vacuum Nano-Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, Ohio 45221, USA
S. B. Fairchild
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA
P. T. Murray
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA
T. C. Back
Research Institute, University of Dayton, Dayton, Ohio 45469, USA
Reducing the emission of secondary electrons from materials is critical to improved efficiency and increased performance in high power vacuum electronics. A new mathematical expression for the secondary emission yield (SEY) as a function of the impact voltage up to a maximum of 5 kilovolts is proposed which is an extension of a formula first suggested by Vaughan. The new analytical fit and Vaughan’s fit are compared with SEY experimental data reported by others and measured by our group. The new analytical expression gives good fits to SEY experimental data in all cases, even when the SEY maximum is either slightly larger or below unity, two situations for which Vaughan’s fit is either inadequate or inapplicable.
