Analysis of Kinetic Properties and Tunnel-Coupled States in Asymmetrical Multilayer Semiconductor Structures

Abstract

This study investigates the kinetic properties of both symmetrical and asymmetrical multilayer and nano-sized semiconductor structures. We develop a theoretical framework using various models and mathematical methods to solve the Schrödinger matrix equation for a system of electrons, taking into account the Bastard condition, which considers the difference in the effective masses of current carriers in adjacent layers. We analyze tunnel-coupled electronic states in quantum wells separated by a narrow tunnel-transparent potential barrier. Our findings provide insights into the electronic properties of semiconductor structures, which are crucial for applications in micro- or nanoelectronics and other areas of solid-state physics.

Keywords

• multilayer and nano-sized semiconductor structures
• schrödinger matrix equation
• hamiltonian
• electrons
• bastard condition.