Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors

• Atsushi Tanaka,
• Ryuji Sugiura,
• Daisuke Kawaguchi,
• Yotaro Wani,
• Hirotaka Watanabe,
• Hadi Sena,
• Yuto Ando,
• Yoshio Honda,
• Yasunori Igasaki,
• Akio Wakejima,
• Yuji Ando,
• Hiroshi Amano

Affiliations

Atsushi Tanaka

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Ryuji Sugiura

Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K.

Daisuke Kawaguchi

Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K.

Yotaro Wani

Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K.

Hirotaka Watanabe

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Hadi Sena

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Yuto Ando

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Yoshio Honda

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Yasunori Igasaki

Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K.

Akio Wakejima

Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology

Yuji Ando

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University

Hiroshi Amano

Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University