Giant (Dec 2021)

Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing

  • Tao Wen,
  • Bo Ni,
  • Yuchu Liu,
  • Wei Zhang,
  • Zi-Hao Guo,
  • Yi-Chien Lee,
  • Rong-Ming Ho,
  • Stephen Z.D. Cheng

Journal volume & issue
Vol. 8
p. 100078

Abstract

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Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail (i.e., DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A follow-up thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several µm2). The solvent evaporation and thermal annealing process, together with the strong segregation strength (χN) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano-sized line grating fabrication.

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