Hybrid III-V/Silicon photonic circuits embedding generation and routing of entangled photon pairs

Abstract

Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.