Moldavian Journal of the Physical Sciences (Dec 2005)

Impurity distribution in n-ZnSe crystals doped with Au

  • Nedeoglo, Dumitru,
  • Nedeoglo, Natalia,
  • Sirkeli, Vadim

Journal volume & issue
Vol. 4, no. 4
pp. 435 – 437

Abstract

Read online

Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn Au melt, is proposed.