Passivation of Sodium Benzenesulfonate at the Buried Interface of a High-Performance Wide-Bandgap Perovskite Solar Cell

Abstract

The phase segregation of wide-bandgap perovskite is detrimental to a device’s performance. We find that Sodium Benzenesulfonate (SBS) can improve the interface passivation of PTAA, thus addressing the poor wettability issue of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine](PTAA). This improvement helps mitigate interface defects caused by poor contact between the perovskite and PTAA, reducing non-radiative recombination. Additionally, enhanced interface contact improves the crystallinity of the perovskite, leading to higher-quality perovskite films. By synergistically controlling the crystallization and trap passivation to reduce the phase segregation, SBS-modified perovskite solar cells (PSCs) achieved a power conversion efficiency (PCE) of 20.27%, with an open-circuit voltage (Voc) of 1.18 V, short-circuit current density (Jsc) of 20.93 mA cm−2, and fill factor (FF) of 82.31%.

Keywords

• buried interface
• inverted wide-bandgap perovskite solar cells
• interface passivation