Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

Abstract

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A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).

Keywords

• selectorless
• OTP
• fuse
• resistive random-access memory
• self-rectify