Operation Mechanism of a MoS2/BP Heterojunction FET

Abstract

The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.

Keywords

• MoS2
• black phosphorus
• 2D/2D heterojunction
• junction FET
• tunneling diode
• tunneling FET
• band-to-band tunneling (BTBT)