Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga<sub>2</sub>O<sub>3</sub> Thin Films
Mingzhi Fang,
Weiguo Zhao,
Feifei Li,
Deliang Zhu,
Shun Han,
Wangying Xu,
Wenjun Liu,
Peijiang Cao,
Ming Fang,
Youming Lu
Affiliations
Mingzhi Fang
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Weiguo Zhao
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Feifei Li
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Deliang Zhu
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Shun Han
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Wangying Xu
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Wenjun Liu
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Peijiang Cao
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Ming Fang
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
Youming Lu
Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China
A high-performance solar-blind photodetector with a metal−semiconductor−metal structure was fabricated based on amorphous In-doped Ga2O3 thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga2O3 photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.
