Thermal and electrical properties of silicon nitride substrates

Abstract

This work presents the results of studies on the thermal and electrical properties of sintered silicon nitride to investigate the effects of non-oxide additives. With regard to electrical transport properties, a high electrical resistivity of 1014 ∼ 1015 Ωcm at 323 K was observed with Si3N4 substrates. Typical electrical resistivity and thermal conductivity values of the Si3N4 substrates were 1015 Ωcm and 90 W/mK at room temperature, respectively. Based on the results of XPS measurement, it is suggested that the addition of Nb significantly improved oxygen gettering by the phases of Nb2O5. Based on the analysis of the thermal conductivity of Si3N4 substrates, it appears that the interaction between oxygen and Nb in Si3N4, enhanced the thermal conduction rate of Si3N4.