Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

W. Lu; C. Y. Wei; K. Jiang; J. Q. Liu; J. X. Lu; P. Han; A. D. Li; Y. D. Xia; B. Xu; J. Yin; Z. G. Liu

doi:10.1063/1.4929521

AIP Advances (Aug 2015)

Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

W. Lu,
C. Y. Wei,
K. Jiang,
J. Q. Liu,
J. X. Lu,
P. Han,
A. D. Li,
Y. D. Xia,
B. Xu,
J. Yin,
Z. G. Liu

Affiliations

W. Lu: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
C. Y. Wei: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
K. Jiang: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
J. Q. Liu: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
J. X. Lu: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
P. Han: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
A. D. Li: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
Y. D. Xia: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
B. Xu: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
J. Yin: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China
Z. G. Liu: National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P. R. China

DOI: https://doi.org/10.1063/1.4929521
Journal volume & issue: Vol. 5, no. 8
pp. 087158 – 087158-8

Abstract

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The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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