Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

Abstract

Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images.

Keywords

• high-index si surface
• in situ measurement
• oxidation
• scanning tunneling microscopy (stm)