Macroscopic Quantum Effects in Domain Boundaries of the Uniaxial Ferromagnetic Films with the Strong Magnetic Anisotropy

Abstract

The quantum effects (tunnelling, reflection above a barrier, oscillations) occurring for nanosize elements of the interior structure of domain walls (vertical Bloch lines and Bloch points) in the ferromagnetic films with a strong uniaxial magnetic anisotropy are reviewed. Conditions for the realization of these phenomena are determined. Based on the quantum properties of a pair of unipolar vertical Bloch lines in the domain wall of the stripe magnetic domain, a new-type memory cell ‘bit + qubit’ is proposed for a prospective memory device with a hybrid form of the information recording.

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