Multi-factors-regulated memristor based on Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 for artificial neural network

Fulai Lin; Zhuoqun Li; Bai Sun; Wei Peng; Zelin Cao; Kaikai Gao; Yu Cui; Kun Zhu; Qiang Lu; Jinglei Li; Yi Lyu; Fenggang Ren

Materials Today Advances (Jun 2024)

Multi-factors-regulated memristor based on Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 for artificial neural network

Fulai Lin,
Zhuoqun Li,
Bai Sun,
Wei Peng,
Zelin Cao,
Kaikai Gao,
Yu Cui,
Kun Zhu,
Qiang Lu,
Jinglei Li,
Yi Lyu,
Fenggang Ren

Affiliations

Fulai Lin: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
Zhuoqun Li: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; Department of Hepatobiliary Surgery ,The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
Bai Sun: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University ,Xi'an, Shaanxi, 710049, China; Corresponding author. National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China.
Wei Peng: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
Zelin Cao: Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University ,Xi'an, Shaanxi, 710049, China
Kaikai Gao: Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University ,Xi'an, Shaanxi, 710049, China
Yu Cui: Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University ,Xi'an, Shaanxi, 710049, China
Kun Zhu: Department of Neurology, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
Qiang Lu: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; Department of Hepatobiliary Surgery ,The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
Jinglei Li: Electronic Materials Research Laboratory (Key Lab of Education Ministry), State Key Laboratory for Mechanical Behavior of Materials and School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
Yi Lyu: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; School of Future Technology, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China; Department of Hepatobiliary Surgery ,The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China
Fenggang Ren: National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; Department of Hepatobiliary Surgery ,The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China; Corresponding author. National Local Joint Engineering Research Center for Precision Surgery and Regenerative Medicine, The First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi, 710061, China.

Journal volume & issue: Vol. 22
p. 100506

Abstract

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The memristor, characterized by its resistive switching (RS) behavior, has garnered significant interest within the scientific community, particularly because of its vast potential applications in the fields of artificial intelligence (AI) and information storage. This is attributed to its unique properties, which align well with the requirements of advanced computational and memory systems. Ferroelectric memristors are currently a thriving area of research, and this study uses Sm-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 (Sm-PMN-PT) and polyvinylidene difluoride (PVDF) as the functional layer. A multi-factor responsive memristor based on a Ag/Sm-PMN-PT:PVDF/ITO sandwich structure is fabricated, for which the RS behavior of the memristor can be adjusted by multi-factors such as voltage scanning rate, bias voltage amplitude, temperature and environmental humidity. Specifically, this device is sensitive to changes in environmental humidity and exhibits the properties of an artificial neural synapse. These advantageous characteristics endow this device with great potential for use in environmental sensors and artificial neural network (ANN) systems.

Published in Materials Today Advances

ISSN: 2590-0498 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-today-advances

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