28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Abstract

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103WRITE-endurance cycles and 104seconds of data-retention capability at 85 °C. We have also assessed the FeFET-based crossbar array’s performance in system-level applications. The system performance was assessed by simulating the FeFET crossbar array for neuromorphic applications. For datasets from the National Institute of Standards and Technology (MNIST), the crossbar array achieved software-comparable inference accuracy of about 97% using multilayer perceptron (MLP) neural networks.

Keywords

• FeFET
• HfO2
• Ferroelectric memory
• Artificial synapse
• 28 nm-HKMG
• Hafnium oxide