Evolution of the Cu2ZnSnS4 phase based on the sulfurization-crystallisation duration of the CuS/SnS/ZnS stack formed by thermal evaporation

Abstract

ABSTRACTBinary sulfides were deposited by sequential thermal evaporation with the stacking order glass/CuS/SnS/ZnS and subsequently subjected to a sulfurization-crystallization process, considering two thermal treatment time intervals, 5 and 20 min. The objective of implementing different annealing durations was to identify the best conditions to form CZTS films in the pure kesterite phase. After being subjected to the annealing, the films show structural characteristics of the kesterite phase. However, XRD data showed that prolonged annealing causes degradation of the kesterite phase, leading to the formation of traces of CuS and Cu5Sn2S7. The films annealed for shorter duration, in this case 5 min, present a denser and more uniform surface morphology, better degree of preferential orientation, small Urbach energy of 0.302 eV, and higher photosensitivity. The band gap of the films was 1.46 eV and 1.53 eV for annealing durations 5 and 20 min, respectively.

Keywords

• Semiconducting quaternary alloys
• physical vapor deposition processes
• Cu2ZnSnS4
• thermal evaporation
• sulfurization time
• thin films