Processing and Application of Ceramics (Mar 2025)

Optimisation of piezoelectric and dielectric properties of Bi4Ti2.95W0.05O12 ceramics by Ce4+ doping

  • Chen Tao,
  • Liu Tiantian,
  • Chen Yang,
  • Qi Zhang

DOI
https://doi.org/10.2298/PAC2501065C
Journal volume & issue
Vol. 19, no. 1
pp. 65 – 75

Abstract

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High-temperature lead-free Bi4-xCexTi2.95W0.05O12 (where x = 0, 0.02, 0.04, 0.06) piezoelectric ceramics were prepared by conventional solid-state method and sintering at 1080°C. This study investigated the effects of modulating the degree of ceramic lattice distortion by varying the amount of Ce4+ doping on the microscopic morphology as well as the piezoelectric and dielectric properties. The results indicated that an appropriate level of Ce4+ doping resulted in a suitable degree of lattice distortion within the piezoelectric ceramics, thereby enhancing both the piezoelectric and dielectric properties while reducing dielectric losses. Notably, when the doping level reached x = 0.04, the sample exhibited its optimal performance, specifically with a d33 of 25 Pc/N, TC of 618°C, tan δ of 0.09 and Qm of 3364. These findings strongly suggest that this material has significant potential for applications in high-level sensing domain.

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