Scientific Reports (Aug 2023)

Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

  • Hyejin Kim,
  • Jongseon Seo,
  • Seojin Cho,
  • Seonuk Jeon,
  • Jiyong Woo,
  • Daeseok Lee

DOI
https://doi.org/10.1038/s41598-023-41202-5
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 6

Abstract

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Abstract Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices.