Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

Hong Li; Jiahui Li; Fengbin Liu; Kang An; Jing Lu

Next Materials (Jul 2024)

Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

Hong Li,
Jiahui Li,
Fengbin Liu,
Kang An,
Jing Lu

Affiliations

Hong Li: College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, PR China; Corresponding author.
Jiahui Li: College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, PR China
Fengbin Liu: College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, PR China
Kang An: College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, PR China
Jing Lu: State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, PR China; Collaborative Innovation Center of Quantum Matter, Beijing 100871, PR China; Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, PR China; Corresponding author at: State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, PR China.

Journal volume & issue: Vol. 4
p. 100116

Abstract

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The enhancement of photogalvanic effect (PGE) is vital for the application of optoelectronics. We use the ab initio quantum transport method to study the possible enhancement of PGE by importing a lateral PtSSe-HfSSe heterojunction. Under irradiation of linearly polarized light with photon energies (Eph) of 0.8–6.2 eV, the overall increase ratio of the PGE photocurrent is over 20/50 along the armchair/zigzag direction. The lateral PtSSe-HfSSe photodetector along the armchair direction exhibits a better photon response than the photodetector along the zigzag direction. The maximal PGE photocurrent is 42.26 a02/photon at Eph = 2.0 eV, and the highest extinction ratio is 2.5 × 104 at Eph = 1.6 eV. Our study indicates that the lateral PtSSe-HfSSe heterojunction is a favorable candidate for optoelectronics.

Published in Next Materials

ISSN: 2949-8228 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology
Website: https://www.sciencedirect.com/journal/next-materials

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