Scientific Reports (Mar 2017)

Transition from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga

  • Z. H. Liu,
  • Y. J. Zhang,
  • G. D. Liu,
  • B. Ding,
  • E. K. Liu,
  • Hasnain Mehdi Jafri,
  • Z. P. Hou,
  • W. H. Wang,
  • X. Q. Ma,
  • G. H. Wu

DOI
https://doi.org/10.1038/s41598-017-00621-x
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 7

Abstract

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Abstract We report experimental observation of large anomalous Hall effect exhibited in non-collinear triangular antiferromagnet D019-type Mn3Ga with coplanar spin structure at temperatures higher than 100 K. The value of anomalous Hall resistivity increases with increasing temperature, which reaches 1.25 μΩ · cm at a low field of ~300 Oe at room temperature. The corresponding room-temperature anomalous Hall conductivity is about 17 (Ω · cm)−1. Most interestingly, as temperature falls below 100 K, a temperature-independent topological-like Hall effect was observed. The maximum peak value of topological Hall resistivity is about 0.255 μΩ · cm. The appearance of the topological Hall effect is attributed to the change of spin texture as a result of weak structural distortion from hexagonal to orthorhombic symmetry in Mn3Ga. Present study suggests that Mn3Ga shows promising possibility to be antiferromagnetic spintronics or topological Hall effect-based data storage devices.