Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor

Abstract

Abstract The development and application of artificial intelligence have led to the exploitation of low‐power and compact intelligent information‐processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS2/h‐BN/CuInP2S6 (CIPS)‐based ferroelectric field‐effect transistors (Fe‐FETs) and utilized light‐induced ferroelectric polarization reversal to achieve excellent memory properties and multi‐functional sensing‐memory‐computing vision simulations are designed. The device exhibits a high on/off current ratio of over 105, long retention time (>104 s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7‐bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), long‐term potentiation, and long‐term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina‐like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing‐memory‐processing.

Keywords

• full‐vdW ferroelectric field effect transistor
• multilevel memory
• neuromorphic vision system
• sensing‐memory‐computing