MEASUREMENT OF CHARGE INSTABILITY OF TIR STRUCTURE

Abstract

Background. The information content of the complex for measuring the parameters of the TIR structure can be increased by using a GLIN implemented on the basis of a microcontroller in its configuration. Materials and methods. The method of a "small" signal is used, designed for the analysis of nonlinear electrical systems representing semiconductor structures, and used to model the transfer function and describe the response of such systems at "small" values of the amplitude of the measuring signal supplied to the input of the system. This approach allows us to evaluate the response of a system with a semiconductor, which is a metal-dielectric-semiconductor (MDP) structure, and fix the C-V characteristics of this structure. Results. The addition of a microcontroller to the GLIN makes it possible to implement a universal research complex that can assess in more detail the characteristics of a TIR structure with dielectric layers of various thicknesses, both thin and significantly enlarged. Conclusions. The use of a microcontroller in GLIN, capable, along with the operations of memorization and storage, to perform the computational ones necessary for the final assessment of the charge instability of the TIR structure, not only expands the amount of information received, but also allows us to evaluate the reaction of the investigated TIR structure, located in various energy states, to the external influence of a "small" signal.

Keywords

• energy states
• hysteresis
• polarization properties
• tir structures
• microcontroller
• volt-farad dependence
• thick dielectric layer