Antiferromagnetic Phase Induced by Nitrogen Doping in 2D Cr<sub>2</sub>S<sub>3</sub>
Wenda Zhou,
Mingyue Chen,
Cailei Yuan,
He Huang,
Jingyan Zhang,
Yanfei Wu,
Xinqi Zheng,
Jianxin Shen,
Guyue Wang,
Shouguo Wang,
Baogen Shen
Affiliations
Wenda Zhou
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Mingyue Chen
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Cailei Yuan
Jiangxi Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China
He Huang
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Jingyan Zhang
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Yanfei Wu
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Xinqi Zheng
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Jianxin Shen
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Guyue Wang
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Shouguo Wang
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Baogen Shen
School of Materials Science and Engineering, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
Exploration for the new members of air-stable 2D antiferromagnetic magnets to widen the magnetic families has drawn great attention due to its potential applications in spintronic devices. In addition to seeking the intrinsic antiferromagnets, externally introducing antiferromagnetic ordering in existing 2D materials, such as structural regulation and phase engineering, may be a promising way to modulate antiferromagnetism in the 2D limit. In this work, the in situ nitrogen doping growth of ultrathin 2D Cr2S3 nanoflakes has been achieved. Antiferromagnetic ordering in 2D Cr2S3 nanoflakes can be triggered by nitrogen doping induced new phase (space group P3¯1c). This work provides a new route to realize antiferromagnetism in atomically thin 2D magnets and greatly extend applications of 2D magnets in valleytronics and spintronics.