High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
Yinhe Wu,
Xingchi Ma,
Longyang Yu,
Xin Feng,
Shenglei Zhao,
Weihang Zhang,
Jincheng Zhang,
Yue Hao
Affiliations
Yinhe Wu
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
Xingchi Ma
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
Longyang Yu
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Xin Feng
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
Shenglei Zhao
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Weihang Zhang
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
Jincheng Zhang
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Yue Hao
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (RON) only reaches 1.55 when the working temperature increases from 25 °C to 150 °C. This increase in RON is caused by a reduction in optical phonon scattering-limited mobility (μOP) in the AlGaN material. Moreover, the device also displays great high-performance stability in that the variation of the threshold voltage (ΔVTH) is only 0.1 V, and the off-state leakage current (ID,off-state) is simply increased from 2.87 × 10−5 to 1.85 × 10−4 mA/mm, under the operating temperature variation from 25 °C to 200 °C. It is found that the two trap states are induced at high temperatures, and the trap state densities (DT) of 4.09 × 1012~5.95 × 1012 and 7.58 × 1012~1.53 × 1013 cm−2 eV−1 are located at ET in a range of 0.46~0.48 eV and 0.57~0.61 eV, respectively, which lead to the slight performance degeneration of AlGaN HEMT. Therefore, this work provides experimental and theoretical evidence of AlGaN HEMT for high-temperature applications, pushing the development of ultra-wide gap semiconductors greatly.
