Numerical analysis of temperature and current distributions in large-size intrinsic Josephson junctions with self-heating
Dai Oikawa,
Haruki Mitarai,
Hiromi Tanaka,
Keita Tsuzuki,
Yuki Kumagai,
Toko Sugiura,
Hiroya Andoh,
Takehiko Tsukamoto
Affiliations
Dai Oikawa
Department of Electrical and Electronic Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Haruki Mitarai
Department of Electrical and Electronic Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Hiromi Tanaka
Department of Electrical and Computer Engineering, National Institute of Technology, Yonago College, 4448 Hikona-cho, Yonago, Tottori Prefecture, Japan
Keita Tsuzuki
Department of Information and Computer Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Yuki Kumagai
Department of Electrical and Electronic Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Toko Sugiura
Department of Electrical and Electronic Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Hiroya Andoh
Department of Information and Computer Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
Takehiko Tsukamoto
Department of Electrical and Electronic Engineering, National Institute of Technology, Toyota College, 2-1 Eisei-cho, Toyota, Aichi Prefecture, Japan
In this study, we focused on temperature and current distributions in voltage-state large-size intrinsic Josephson junction (IJJ) mesas with a self-heating effect. Because it is difficult to experimentally obtain temperature and current distributions in IJJ mesas, we numerically computed these distributions by solving non-linear diffusion and temperature dependence circuit equations. The local temperature in the mesa exceeded the critical temperature, and a normal-state appeared in the high bias region. Non-uniform temperature and current density distributions were obtained for each bias point of the current–voltage (I–V) characteristics. Normalized c-axis current distributions decreased with an increase in the bias current in the high bias regions. These results were explained using temperature dependent c-axis resistivity.
