Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jul 2019)

Formation of titanium oxide thin films by reactive magnetron sputtering

  • N. Villa,
  • D. A. Golosov,
  • T. D. Nguyen

DOI
https://doi.org/10.35596/1729-7648-2019-123-5-87-93
Journal volume & issue
Vol. 0, no. 5
pp. 87 – 93

Abstract

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The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O2 gas mixture during film deposition were established. Films with a dielectric constant of 20-30 units, a dielectric loss tangent of 0,02, a band gap of 3,82 eV, a leakage current density of less than 1,0 A/cm2 at an electric field strength of 2,0*106 V/cm, were obtained.

Keywords