Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Jijun Feng
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Shuo Yuan
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Haipeng Liu
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Zhiheng Yu
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Cunliang Yang
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Wenbo Ren
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Xincheng Xia
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Zhengjie Wang
Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Fengli Huang
Key Laboratory of Medical Electronics and Digital Health of Zhejiang Province, Jiaxing University, Jiaxing 314001, China
In this work, phase-apodized silicon grating filters with varying sidewall corrugation width and location were investigated, while the resonance wavelength, extinction ratio, and rejection bandwidth were tuned flexibly. The grating filters with a waveguide width of 500 nm and grating period of 400 nm were fabricated and characterized as a proof of concept. The resonance wavelength of the device can be shifted by 4.54 nm by varying the sidewall corrugation width from 150 to 250 nm. The corresponding rejection bandwidth can be changed from 1.19 to 2.03 nm by applying a sidewall corrugation location offset from 50 to 200 nm. The experimental performances coincide well with the simulation results. The presented sidewall corrugation-modulated apodized grating can be expected to have great application prospects for optical communications and semiconductor lasers.
