Electronics Letters (Aug 2021)
Generation of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO2 deposition and subsequent high‐temperature annealing
Abstract
Abstract SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sheet carrier concentrations were over 1100 cm2/Vs and 3.0 × 1012 cm–2, respectively. Surface energy lowering, which is proof of the generated 2DEG, was observed by electron state analysis using hard X‐ray photoelectron spectroscopy. This damage‐less method that selectively generates a 2DEG can contribute not only toward improving some characteristics in existing devices but also toward creating entirely novel devices.
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