Science and Technology of Advanced Materials (Dec 2023)

Microstructure characterization, phase transition, and device application of phase-change memory materials

  • Kai Jiang,
  • Shubing Li,
  • Fangfang Chen,
  • Liping Zhu,
  • Wenwu Li

DOI
https://doi.org/10.1080/14686996.2023.2252725
Journal volume & issue
Vol. 24, no. 1

Abstract

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ABSTRACTPhase-change memory (PCM), recently developed as the storage-class memory in a computer system, is a new non-volatile memory technology. In addition, the applications of PCM in a non-von Neumann computing, such as neuromorphic computing and in-memory computing, are being investigated. Although PCM-based devices have been extensively studied, several concerns regarding the electrical, thermal, and structural dynamics of phase-change devices remain. In this article, aiming at PCM devices, a comprehensive review of PCM materials is provided, including the primary PCM device mechanics that underpin read and write operations, physics-based modeling initiatives and experimental characterization of the many features examined in nanoscale PCM devices. Finally, this review will propose a prognosis on a few unsolved challenges and highlight research areas of further investigation.

Keywords