Comparison of Low Field Electron Transport in Zincblende and Wurtzite SiC Structures for High Gain Device Modeling

Journal of Applied Computer Science & Mathematics. 2011;5(10):93-97


Journal Homepage

Journal Title: Journal of Applied Computer Science & Mathematics

ISSN: 2066-4273 (Print); 2066-3129 (Online)

Publisher: Stefan cel Mare University of Suceava

Society/Institution: "Stefan cel Mare" University of Suceava

LCC Subject Category: Science: Mathematics: Instruments and machines: Electronic computers. Computer science

Country of publisher: Romania

Language of fulltext: English

Full-text formats available: PDF



Hadi Arabshahi
Fatemeh Sarlak


Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 13 weeks


Abstract | Full Text

Temperature and doping dependencies of electron mobility in both wurtzite and zincblende SiC structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, piezoelectric and electron plasmon are inculded in the calculation. Ionized imurity scattering has been treated beyound the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 to 500 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.