Ibn Al-Haitham Journal for Pure and Applied Sciences (Apr 2017)

Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction

  • Fatin G. Hachim,
  • Ramiz A. Al-Ansari,
  • Hussein Kh. AL-Lamy

Journal volume & issue
Vol. 26, no. 1

Abstract

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Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25µm), with rate of deposition equals to 2.77 Å/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.

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