AIP Advances
(Aug 2016)
Seed layer technique for high quality epitaxial manganite films
P. Graziosi,
A. Gambardella,
M. Calbucci,
K. O’Shea,
D. A. MacLaren,
A. Riminucci,
I. Bergenti,
S. Fugattini,
M. Prezioso,
N. Homonnay,
G. Schmidt,
D. Pullini,
D. Busquets-Mataix,
V. Dediu
Affiliations
P. Graziosi
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
A. Gambardella
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
M. Calbucci
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
K. O’Shea
Scottish Universities Physics Alliance, School of Physics and Astronomy, University of Glasgow, Glasgow, United Kingdom
D. A. MacLaren
Scottish Universities Physics Alliance, School of Physics and Astronomy, University of Glasgow, Glasgow, United Kingdom
A. Riminucci
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
I. Bergenti
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
S. Fugattini
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
M. Prezioso
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
N. Homonnay
Institut für Physik, Universität Halle, 06120 Halle, Germany
G. Schmidt
Institut für Physik, Universität Halle, 06120 Halle, Germany
D. Pullini
Centro Ricerche Fiat, 10043, Orbassano, Torino, Italy
D. Busquets-Mataix
Instituto de Tecnología de Materiales, Universitat Politécnica de Valencia, Camino de Vera s/n, 46022, Valencia, Spain
V. Dediu
CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129 Bologna, Italy
DOI
https://doi.org/10.1063/1.4961228
Journal volume & issue
Vol. 6,
no. 8
Abstract
Read online
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.
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