Electrical Properties and Interfacial Issues of HfO<sub>2</sub>/Ge MIS Capacitors Characterized by the Thickness of La<sub>2</sub>O<sub>3</sub> Interlayer
Lu Zhao,
Hongxia Liu,
Xing Wang,
Yongte Wang,
Shulong Wang
Affiliations
Lu Zhao
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Hongxia Liu
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Xing Wang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Yongte Wang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Shulong Wang
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface smoothness of HfO2/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La2O3 passivation layer can affect the shift of flat band voltage (VFB), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La2O3 interlayer thickness.
