Nature Communications (Oct 2019)
High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
- Feng Wu,
- Qing Li,
- Peng Wang,
- Hui Xia,
- Zhen Wang,
- Yang Wang,
- Man Luo,
- Long Chen,
- Fansheng Chen,
- Jinshui Miao,
- Xiaoshuang Chen,
- Wei Lu,
- Chongxin Shan,
- Anlian Pan,
- Xing Wu,
- Wencai Ren,
- Deep Jariwala,
- Weida Hu
Affiliations
- Feng Wu
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Qing Li
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Peng Wang
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Hui Xia
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Zhen Wang
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Yang Wang
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Man Luo
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Fansheng Chen
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Jinshui Miao
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Wei Lu
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University
- Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and School of Physics and Electronics, Hunan University
- Xing Wu
- School of Information Science and Technology, East China Normal University
- Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania
- Weida Hu
- State Key Laboratory of Infrared Physics, Key Laboratory of Intelligent Infrared Perception, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-019-12707-3
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 8
Abstract
Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.
