EPJ Web of Conferences (Jan 2020)

Crystallization of HfO2 thin films and their influence on laser induced damage

  • Balogh-Michels Zoltán,
  • Stevanovic Igor,
  • Frison Ruggero,
  • Bächli Andreas,
  • Schachtler Daniel,
  • Gischkat Thomas,
  • Neels Antonia,
  • Stuck Alexander,
  • Botha Roelene

DOI
https://doi.org/10.1051/epjconf/202023812004
Journal volume & issue
Vol. 238
p. 12004

Abstract

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We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.