A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

Rongfeng Zhu; Jing Zhao; Jianwei Chen; Bijun Fang; Haiqing Xu; Wenning Di; Jie Jiao; Xi’an Wang; Haosu Luo

doi:10.3390/ma13112562

Materials (Jun 2020)

A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

Rongfeng Zhu,
Jing Zhao,
Jianwei Chen,
Bijun Fang,
Haiqing Xu,
Wenning Di,
Jie Jiao,
Xi’an Wang,
Haosu Luo

Affiliations

Rongfeng Zhu: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jing Zhao: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jianwei Chen: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Bijun Fang: School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou 213164, China
Haiqing Xu: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Wenning Di: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jie Jiao: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Xi’an Wang: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Haosu Luo: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China

DOI: https://doi.org/10.3390/ma13112562
Journal volume & issue: Vol. 13, no. 11
p. 2562

Abstract

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Mn:0.15Pb(In1/2Nb1/2)O3-0.55Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 109 cmHz1/2W−1, nearly three times higher than in commercial LiTaO3 detectors.

Published in Materials

ISSN: 1996-1944 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering; Technology: Engineering (General). Civil engineering (General); Science: Natural history (General): Microscopy; Science: Physics: Descriptive and experimental mechanics
Website: http://www.mdpi.com/journal/materials/

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