Advanced Materials Interfaces (Dec 2022)

Magneto‐Ionics in Annealed W/CoFeB/HfO2 Thin Films

  • Rohit Pachat,
  • Djoudi Ourdani,
  • Maria‐Andromachi Syskaki,
  • Alessio Lamperti,
  • Subhajit Roy,
  • Song Chen,
  • Adriano Di Pietro,
  • Ludovic Largeau,
  • Roméo Juge,
  • Maryam Massouras,
  • Cristina Balan,
  • Johannes Wilhelmus van der Jagt,
  • Guillaume Agnus,
  • Yves Roussigné,
  • Mihai Gabor,
  • Salim Mourad Chérif,
  • Gianfranco Durin,
  • Shimpei Ono,
  • Jürgen Langer,
  • Damien Querlioz,
  • Dafiné Ravelosona,
  • Mohamed Belmeguenai,
  • Liza Herrera Diez

DOI
https://doi.org/10.1002/admi.202200690
Journal volume & issue
Vol. 9, no. 36
pp. n/a – n/a

Abstract

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Abstract The magneto‐ionic modulation of the Dzyaloshinskii–Moriya interaction (DMI) and the perpendicular magnetic anisotropy (PMA), in W/CoFeB/HfO2 stacks annealed at different temperatures and for varying annealing times, are presented in this work. A large modulation of PMA and DMI is observed in the systems annealed at 390 and 350 °C, whereas no response to voltage is observed in the as‐grown samples. A strong DMI is only observed in the samples annealed at 390 °C for 1 h, while PMA is present for all annealing times at temperatures of 390 and 350 °C. Magnetic properties including domain wall velocity improve drastically with increasing the annealing temperature and time, while the magneto‐ionic reversibility is increasingly compromised. The changes in PMA and DMI induced by the gate voltages in the samples annealed at 390 °C are permanent, while partial reversibility is only observed for the samples annealed at 350 °C for short times. This dependence of reversibility on post‐grown annealing has been associated to the influence of crystallization on ion mobility. These results show that a compromise between the enhancement of the magnetic properties and the magneto‐ionic performance could be needed in systems requiring annealing to develop PMA and DMI.

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